Description

2010/09/29, M.A. Semina, Ioffe Physical-Technical Institute, RAS, 194021 St.-Petersburg, Russia

Place:  Sala de Seminarios del Departamento de Física Teórica e Historia de la Ciencia
Time: 12h.
Title: Acceptor states in semiconductor quantum wells and quantum wires

Abstract
We study the effect of localization on the binding energy of ground state of acceptors in semiconductor quantum structures. The degenerate structure of the valence band is taken into account. The localization in quantum structures not only increases the efficiency of the Coulomb interaction between the hole and the charged center but also changes the states of the hole and modifies its effective mass. These two effects have the opposite impact on the acceptor binding energy. We developed variational method to calculate the acceptor binding energy and demonstrated that this quantity is a non-monotonous function of the systems size and localization may result in the decrease of the binding energy contrary the simple band systems.