New publication: Reduced hydrogen diffusion in strained amorphous SiO 2: understanding ageing in MOSFET devices

We have a new publication: “Reduced hydrogen diffusion in strained amorphous SiO 2: understanding ageing in MOSFET devices” published in the Journal of Materials Chemistry C

http://pubs.rsc.org/-/content/articlelanding/2016/tc/c6tc02647h#!divAbstract

Negative Bias Temperature Instability (NBTI) is one of the main ageing processes in MOSFET devices, and it is related among others to H diffusion within the SiO2 dielectric […]