EPOGAN Project: Gallium Nitride (GaN)  in Power Conversion

Researching in GaN semiconductors to gain competitiveness in Power Electronics devices


Gallium Nitride (GaN) offers many advantages over silicon in power conversion. The low conduction and switching losses and the ability to operate at high switching frequencies lead to system-level advantages in power-conversion efficiency, improved power densities and simpler converter topologies.

GaN transistors are ideal for use in multi-level converters, solar inverters, industrial motor drives, UPS, high voltage battery chargers,totem pole PFC and high-frequency LLC.

EPOGAN KK-2023/0009 R+D+i objective to analyze and evaluate the characteristics and advantages of GaN semiconductors, resolve the challenges of the use of GaN components in power electronics, and try to demonstrate the full potential of this technology, applying it in several cases of real use, both to improve efficiency and power density and to demonstrate viability in terms of sustainability and cost. Ikerlan (project leader), CEIT, Tecnalia, Tekniker, Mondragón Goi Eskola Politeknikoa, Orona and the APERT Group of the UPV/EHU participate in the project.

This project is funded by the Basque Government through Elkartek 2023 program (ref: EPOGAN KK-2023/00091).