About QUINST

Quantum mechanics is at the heart of our technology and economy - the laser and the transistor are quantum devices - but its full potential is far from being realized. Recent technological advances in optics, nanoscience and engineering allow experimentalists to create artificial structures or put microscopic and mesoscopic systems under new manipulable conditions in which quantum phenomena play a fundamental role.

Quantum technologies exploit these effects with practical purposes. The objective of Quantum Science is to discover, study, and control quantum efects at a fundamental level. These are two sides of a virtuous circle: new technologies lead to the discovery and study of new phenomena that will lead to new technologies.

Our aim is  to control and understand quantum phenomena in a multidisciplinary intersection of  Quantum Information, Quantum optics and cold atoms, Quantum Control, Spintronics, Quantum metrology, Atom interferometry, Superconducting qubits and Circuit QED and Foundations of Quantum Mechanics.

QUINST is funded in part as a “Grupo Consolidado” from the Basque Government (IT472-10, IT986-16, IT1470-22)  and functions as a network of groups with their own funding, structure, and specific goals.  

Latest events

M.A. Semina, Ioffe Physical-Technical Institute, RAS, 194021 St.-Petersburg, Russia

When and where

From: 12/2011 To: 12/2016

Description

2010/09/29, M.A. Semina, Ioffe Physical-Technical Institute, RAS, 194021 St.-Petersburg, Russia

Place:  Sala de Seminarios del Departamento de Física Teórica e Historia de la Ciencia
Time: 12h.
Title: Acceptor states in semiconductor quantum wells and quantum wires

Abstract
We study the effect of localization on the binding energy of ground state of acceptors in semiconductor quantum structures. The degenerate structure of the valence band is taken into account. The localization in quantum structures not only increases the efficiency of the Coulomb interaction between the hole and the charged center but also changes the states of the hole and modifies its effective mass. These two effects have the opposite impact on the acceptor binding energy. We developed variational method to calculate the acceptor binding energy and demonstrated that this quantity is a non-monotonous function of the systems size and localization may result in the decrease of the binding energy contrary the simple band systems.